PackageCircuitVBRDSS (V)RDS(on) 1.8V (mOhms)RDS(on) 2.5V (mOhms)RDS(on) Max 2.7V (mOhms)RDS(on) Max 4.5V (mOhms)RDS(on) Max 10V (mOhms)ID @ TC = 25C (A)ID @ TC = 100C (A)ID @ TA = 25C (A)ID @ TA = 70C (A)Qg Typ (nC)Qgd Typ (nC)Rth(JC) (K/W)Power Dissipation @ TC = 25C (W)Power Dissipation @ TA = 25C (W)PbF1K Budgetary Pricing (USD)IRF7210HEXFET Power MOSFETs Discrete P-ChannelSO-8Discrete-12 10.0 7.0 -16.0-12212.052.050 (JA) 2.50
IRF7210 |
RFQ for IRF7210 |
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| Technical/Catalog Information | IRF7210 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 17179pF @ 10V |
| Power - Max | 2.5W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 212nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7210 IRF7210 |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||||
| IRF7210 | - | SOP | 02+ |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
|
Parameter |
Max. |
Units | |
|
VDS |
Drain- Source Voltage |
-12 |
V |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
±16 |
A |
|
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -4.5V |
±12 | |
|
IDM |
Pulsed Drain Current |
±100 | |
|
PD @TA = 25°C |
Power Dissipation |
2.5 |
W |
|
PD @TA = 70°C |
Power Dissipation |
1.6 | |
| Linear Derating Factor |
0.02 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
± 12 |
V |
|
VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
16 |
V |
|
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
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